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mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 page 0 version 1.1a oct. 2000 change history version 1.1 (october 2000) - first copy. - based on the 1.1 ver. 128/144mbit rdrams(a-die) base rimm datasheet. version 1.1a (october 2000) * update based on the latest rambus rimm datasheet page no. change description 6 - correct v cmos to v dd & add v spd condition 9 - relax tpd as follows 16d 8d 4d old (-800 & -711mhz/-600mhz) 2.06 / 2.10ns 1.50 / 1.60ns 1.25ns new (-800,-711&-600mhz) 2.11ns 1.56ns 1.28ns
page 1 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 overview the rambus ? rimm ? module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. the rambus rimm module consists of 128mb/144mb direct rambus dram devices. these are extremely high- speed cmos drams organized as 8m words by 16 or 18 bits. the use of rambus signaling level (rsl) technology permits 600 mhz, 711 mhz or 800 mhz transfer rates while using conventional system and board design technologies. rdram devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per 16 bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. the separate control and data buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-bank architecture supports up to four simultaneous transactions per device. features h igh speed 800, 711 and 600mhz rdram storage 184 edge connector pads with 1mm pad spacing module pcb size : 133.35mm x 31.75mm x1.27mm (5.25 ? x 1.25 ? x 0.0 5 ? ) each rdram has 32 banks, for a total of 512, 384, 256, 192, or 128 banks on each 256/288mb, 192/216mb, 128/144mb, 96/108mb, or 64/72mb module respectively gold plated edge connector pad contacts serial presence detect(spd) support operates from a 2.5 volt supply ( 5%) powerdown self refresh modes separate row and column buses for higher efficiency m - bga package (62 balls) key timing parameters/part numbers the following table lists the frequency and latency bins available for rimm modules. table 1: part number by freq. & latency form factor the rambus rimm modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact rimm connectors. figure 1 below, shows a sixteen device rambus rimm module. organiza- tion speed part number bin i/o freq. (mhz) t rac (row access time) ns 32m x 16/18 -ck8 800 45 mr16/18r0824bn1-ck8 -ck7 711 45 mr16/18r0824bn1-ck7 -cg6 600 53.3 mr16/18r0824bn1-cg6 48m x 16/18 -ck8 800 45 mr16/18r0826bn1-ck8 -ck7 711 45 mr16/18r0826bn1-ck7 -cg6 600 53.3 mr16/18r0826bn1-cg6 64m x 16/18 -ck8 800 45 mr16/18r0828bn1-ck8 -ck7 711 45 mr16/18r0828bn1-ck7 -cg6 600 53.3 mr16/18r0828bn1-cg6 96m x 16/18 -ck8 800 45 mr16/18r082cbn1-ck8 -ck7 711 45 mr16/18r082cbn1-ck7 -cg6 600 53.3 mr16/18r082cbn1-cg6 128m x 16/18 -ck8 800 45 mr16/18r082gbn1-ck8 -ck7 711 45 mr16/18r082gbn1-ck7 -cg6 600 53.3 mr16/18r082gbn1-cg6 figure 1: rambus rimm module shown with h eat spreader removed note: on double sided modules, rdrams are also installed on bottom side of pcb. (8mx16)*4(6/8/12/16)pcs rimm tm module based on 128mb b-die, 32s banks,16k/32ms ref, 2.5v (8mx18)*4(6/8/12/16)pcs rimm tm module based on 144mb b-die, 32s banks,16k/32ms ref, 2.5v
page 2 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 table 2: module pad numbers and signal names pin pin name pin pin name pin pin name pin pin name a1 gnd b1 gnd a47 nc b47 nc a2 ldqa8 b2 ldqa7 a48 nc b48 nc a3 gnd b3 gnd a49 nc b49 nc a4 ldqa6 b4 ldqa5 a50 nc b50 nc a5 gnd b5 gnd a51 vref b51 vref a6 ldqa4 b6 ldqa3 a52 gnd b52 gnd a7 gnd b7 gnd a53 scl b53 sa0 a8 ldqa2 b8 ldqa1 a54 vdd b54 vdd a9 gnd b9 gnd a55 sda b55 sa1 a10 ldqa0 b10 lcfm a56 svdd b56 svdd a11 gnd b11 gnd a57 swp b57 sa2 a12 lctmn b12 lcfmn a58 vdd b58 vdd a13 gnd b13 gnd a59 rsck b59 rcmd a14 lctm b14 nc a60 gnd b60 gnd a15 gnd b15 gnd a61 rdqb7 b61 rdqb8 a16 nc b16 lrow2 a62 gnd b62 gnd a17 gnd b17 gnd a63 rdqb5 b63 rdqb6 a18 lrow1 b18 lrow0 a64 gnd b64 gnd a19 gnd b19 gnd a65 rdqb3 b65 rdqb4 a20 lcol4 b20 lcol3 a66 gnd b66 gnd a21 gnd b21 gnd a67 rdqb1 b67 rdqb2 a22 lcol2 b22 lcol1 a68 gnd b68 gnd a23 gnd b23 gnd a69 rcol0 b69 rdqb0 a24 lcol0 b24 ldqb0 a70 gnd b70 gnd a25 gnd b25 gnd a71 rcol2 b71 rcol1 a26 ldqb1 b26 ldqb2 a72 gnd b72 gnd a27 gnd b27 gnd a73 rcol4 b73 rcol3 a28 ldqb3 b28 ldqb4 a74 gnd b74 gnd a29 gnd b29 gnd a75 rrow1 b75 rrow0 a30 ldqb5 b30 ldqb6 a76 gnd b76 gnd a31 gnd b31 gnd a77 nc b77 rrow2 a32 ldqb7 b32 ldqb8 a78 gnd b78 gnd a33 gnd b33 gnd a79 rctm b79 nc a34 lsck b34 lcmd a80 gnd b80 gnd a35 vcmos b35 vcmos a81 rctmn b81 rcfmn a36 sout b36 sin a82 gnd b82 gnd a37 vcmos b37 vcmos a83 rdqa0 b83 rcfm a38 nc b38 nc a84 gnd b84 gnd a39 gnd b39 gnd a85 rdqa2 b85 rdqa1 a40 nc b40 nc a86 gnd b86 gnd a41 vdd b41 vdd a87 rdqa4 b87 rdqa3 a42 vdd b42 vdd a88 gnd b88 gnd a43 nc b43 nc a89 rdqa6 b89 rdqa5 a44 nc b44 nc a90 gnd b90 gnd a45 nc b45 nc a91 rdqa8 b91 rdqa7 a46 nc b46 nc a92 gnd b92 gnd
page 3 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 table 3: module connector pad description signal pins i/o type description gnd a1, a3, a5, a7, a9, a11, a13, a15, a17, a19, a21, a23, a25, a27, a29, a31, a33, a39, a52, a60, a62, a64, a66, a68, a70, a72, a74, a76, a78, a80, a82, a84, a86, a88, a90, a92, b1, b3, b5, b7, b9, b11, b13, b15, b17, b19, b21, b23, b25, b27, b29, b31, b33, b39, b52, b60, b62, b64, b66, b68, b70, b72, b74, b76, b78, b80, b82, b84, b86, b88, b90, b92 ground reference for rdram core and interface. 72 pcb connector pads. lcfm b10 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. lcfmn b12 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. lcmd b34 i v cmos serial command used to read from and write to the control registers. also used for power management. lcol4.. lcol0 a20, b20, a22, b22, a24 i rsl column bus. 5-bit bus containing control and address infor- mation for column accesses. lctm a14 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. lctmn a12 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. ldqa8.. ldqa0 a2, b2, a4, b4, a6, b6, a8, b8, a10 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqa8 is non-func- tional on modules with x16 rdram devices ldqb8.. ldqb0 b32, a32, b30, a30, b28, a28, b26, a26, b24 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqb8 is non-func- tional on modules with x16 rdram devices. lrow2.. lrow0 b16, a18, b18 i rsl row bus. 3-bit bus containing control and address information for row accesses. lsck a34 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. nc a16, b14, a38, b38, a40, b40, a43, b43, a44, b44, a45, b45, a46, b46, a47, b47, a48, b48, a49, b49, a50, b50, a77, b79 these pads are not connected. these 24 connector pads are reserved for future use. rcfm b83 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. rcfmn b81 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. rcmd b59 i v cmos serial command input. pin used to read from and write to the control registers. also used for power management.
page 4 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 rcol4.. rcol0 a73, b73, a71, b71, a69 i rsl column bus. 5-bit bus containing control and address infor- mation for column accesses. rctm a79 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. rctmn a81 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. rdqa8.. rdqa0 a91, b91, a89, b89, a87, b87, a85, b85, a83 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqa8 is non-func- tional on modules x16 rdram devices. rdqb8.. rdqb0 b61, a61, b63, a63, b65, a65, b67, a67, b69 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqb8 is non-func- tional on modules x16 rdram devices. rrow2.. rrow0 b77, a75, b75 i rsl row bus. 3-bit bus containing control and address information for row accesses. rsck a59 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. sa0 b53 i sv dd serial presence detect address 0. sa1 b55 i sv dd serial presence detect address 1. sa2 b57 i sv dd serial presence detect address 2. scl a53 i sv dd serial presence detect clock. sda a55 i/o sv dd serial presence detect data (open collector i/o). sin b36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio0 of the first rdram on the module. sout a36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio1 of the last rdram on the module. sv dd a56, b56 spd voltage. used for signals scl, sda, swe, sa0, sa1 and sa2. swp a57 i sv dd serial presence detect write protect (active high). when low, the spd can be written as well as read. v cmos a35, b35, a37, b37 cmos i/o voltage. used for signals cmd, sck, sin, sout. vdd a41, a42, a54, a58, b41, b42, b54, b58 supply voltage for the rdram core and interface logic. vref a51, b51 logic threshold reference voltage for rsl signals. signal pins i/o type description
page 5 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) r d q a 8 r d q a 7 r d q a 6 r d q a 5 r d q a 4 r d q a 3 r d q a 2 r d q a 1 r d q a 0 r c f m r c f m n r c t m r c t m n r r o w 2 r r o w 1 r r o w 0 r c o l 4 r c o l 3 r c o l 2 r c o l 1 r c o l 0 r d q b 0 r d q b 1 r d q b 2 r d q b 3 r d q b 4 r d q b 5 r d q b 6 r d q b 7 r d q b 8 l d q a 8 l d q a 7 l d q a 6 l d q a 5 l d q a 4 l d q a 3 l d q a 2 l d q a 1 l d q a 0 l c f m l c f m n l c t m l c t m n l r o w 2 l r o w 1 l r o w 0 l c o l 4 l c o l 3 l c o l 2 l c o l 1 l c o l 0 l d q b 0 l d q b 1 l d q b 2 l d q b 3 l d q b 4 l d q b 5 l d q b 6 l d q b 7 l d q b 8 u1 s i n l s c k l c m d v r e f s o u t r s c k r c m d vdd g nd 2 per rdram scl sda a0 a1 scl sa0 sa1 sda serial presence detect note 1. rambus channel signals form a loop through the rimm module , with the exception of the sio chain. d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) d q a 8 d q a 7 d q a 6 d q a 5 d q a 4 d q a 3 d q a 2 d q a 1 d q a 0 c f m c f m n c t m c t m n r o w 2 r o w 1 r o w 0 c o l 4 c o l 3 c o l 2 c o l 1 c o l 0 d q b 0 d q b 1 d q b 2 d q b 3 d q b 4 d q b 5 d q b 6 d q b 7 d q b 8 sio 0 sio 1 sck cmd v ref direct rdram (128/144mb) v ref g nd 1 p er 2 rdram s v cmos g nd 1 p er 2 rdram s a2 sa 2 wp swp u0 vcc s v dd 0.1 m f 0.1 m f 0.1 m f sv dd g nd 0.1 m f plus one near connector 47k w u2 u3 un note 2. see serial presence detection specification for information on the spd device and its contents. module capacity n 256/288mb 16 192/216mb 12 128/144mb 8 96/108mb 6 64/72mb 4 figure 2: rimm module functional diagram
page 6 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 absolute maximum ratings dc recommended electrical conditions table 4: absolute maximum ratings symbol parameter min max unit v i,abs voltage applied to any rsl or cmos signal pad with respect to gnd - 0.3 v dd + 0.3 v v dd,abs voltage on vdd with respect to gnd - 0.5 v dd + 1.0 v t store storage temperature - 50 100 c t plate plate temperature - 92 c table 5: dc recommended electrical conditions symbol parameter and conditions min max unit v dd supply voltage 2.50 - 0.13 2.50 + 0.13 v v cmos cmos i/o power supply at pad for 2.5v controllers: cmos i/o power supply at pad for 1.8v controllers: v dd 1.8 - 0.1 v dd 1.8 + 0.2 v v v ref reference voltage 1.4 - 0.2 1.4 + 0.2 v v spd serial presence detector- positive power supply 2.2 3.6 v v il rsl input low voltage v ref - 0.5 v ref - 0.2 v v ih rsl input high voltage v ref + 0.2 v ref + 0.5 v v il,cmos cmos input low voltage - 0.3 0.5v cmos - 0.25 v v ih,cmos cmos input high voltage 0.5v cmos + 0.25 v cmos + 0.3 v v ol,cmos cmos output low voltage @ i ol,cmos = 1ma 0.3 v v oh,cmos cmos output high voltage @ i oh,cmos = -0.25ma v cmos - 0.3 v i ref v ref current @ v ref,max -10 x no. rdrams a 10 x no. rdrams a a. the table below shows the number of 128mb or 144mb rdram devices contained in a rimm module of listed memory storage capacity . m a i sck,cmd cmos input leakage current @ (0 v cmos v dd ) -10 x no. rdrams a 10 x no. rdrams a m a i sin,sout cmos input leakage current @ (0 v cmos v dd ) -10.0 10.0 m a table 6: rimm module capacity and number of rdram device rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb number of 128mb or 144mb rdram devices 16 12 8 6 4
page 7 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 rimm module current profile table 7 : rimm module current profile i dd rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb unit number of 128/144mb rdrams 16 12 8 6 4 rimm module power conditions a freq. max max max max max i dd1 one rdram in read b , balance in nap mode -800 550/580 540/570 520/550 510/540 510/540 ma -711 510/540 500/530 480/510 470/500 470/500 ma -600 460/480 450/470 430/450 420/440 420/440 ma i dd2 one rdram in read b , balance in standby mode -800 2070/2100 1650/1680 1230/1260 1020/1050 810/840 ma -711 1950/1980 1550/1580 1150/1180 950/980 750/780 ma -600 1750/1770 1390/1410 1030/1050 850/870 670/690 ma i dd3 one rdram in read b , balance in active mode -800 2970/3000 2310/2340 1650/1680 1320/1350 990/1020 ma -711 2780/2810 2160/2190 1540/1570 1230/1260 920/950 ma -600 2500/2520 1940/1960 1380/1400 1100/1120 820/840 ma i dd4 one rdram in write, balance in nap mode -800 640/690 620/670 610/660 600/650 590/640 ma -711 590/640 570/630 560/610 550/600 540/600 ma -600 520/560 500/550 490/530 480/520 470/520 ma i dd5 one rdram in write, balance in standby mode -800 2150/2200 1730/1780 1310/1360 1100/1150 890/940 ma -711 2030/2080 1630/1680 1230/1280 1030/1080 830/880 ma -600 1810/1850 1450/1490 1090/1130 910/950 730/770 ma i dd6 one rdram in write, balance in active mode -800 3050/3100 2390/2440 1730/1780 1400/1450 1070/1120 ma -711 2850/2910 2230/2290 1610/1670 1300/1360 990/1050 ma -600 2560/2600 2000/2040 1440/1480 1160/1200 880/920 ma a. actual power will depend on individual rdram component specifications, memory controller and usage patterns. power does not i nclude refresh current. b. i/o current is a function of the % of 1 ? s, to add i/o power for 50% 1 ? s for a x16 need to add 257ma or 290ma for x18 ecc module for the following: v dd = 2.5v, v term = 1.8v, v ref = 1.4v and v dil = v ref - 0.5v.
page 8 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 ac electrical specifications adjusted d t pd specification table 8: ac electrical specifications symbol parameter and conditions min typ max unit z l module impedance of rsl signals 25.2 28 30.8 w z ul-cmos module impedance of sck and cmos signals 23.8 28 32.2 w t pd propagation delay variation of rsl signals. average clock delay from finger to finger of all rsl clock nets (ctm, ctmn, cfm, and cfmn) - see table10 a ,b ns d t pd propagation delay variation of rsl signals with respect to t pd b , c for 4, 6, 8, and 12 device modules -21 21 ps propagation delay variation of rsl signals with respect to t pd b,c for 16 device modules -24 24 ps d t pd-cmos propagation delay variation of sck signals with respect to an aver- age clock delay b -250 250 ps d t pd-sck,cmd propagation delay variation of cmd signals with respect to sck signal -200 200 ps v a /v in attenuation limit see table10 a % v xf /v in forward crosstalk coefficient (300ps input rise time @ 20%-80%) see table10 a % v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%-80%) see table10 a % a. table 10 lists parameters and specifications for different storage capacity rimm modules that use 128mb or 144mb rdram device s. b. t pd or average clock delay is defined as the average delay from finger to finger of all rsl clock nets (ctm, ctmn, cfm, and cfmn). c. if the rimm module meets the following specification, then it is compliant to the specification. if the rimm module does not meet these specifica tions, then the specification can be adjusted by the ? adjusted d t pd specification ? table below. table 9: adjusted d t pd specification symbol parameter and conditions adjusted min/max absolute min / max unit d t pd propagation delay variation of rsl signals with respect to t pd for 4, 6, and 8 device modules +/-[17+(18*n* d z0)] a -30 30 ps propagation delay variation of rsl signals with respect to t pd for 12 device modules +/-[20+(18*n* d z0)] a -40 40 ps propagation delay variation of rsl signals with respect t pd for 16 device modules +/-[24+(18*n* d z0)] a -50 50 ps a. where: n = number of rdram devices installed on the rimm module d z0 = delta z0% = (max z0 - min z0)/(min z0) (max z0 and min z0 are obtained from the loaded (high impedance) impedance coupons of all rsl layers on the modules)
page 9 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 ac electrical specifications for rimm modules table 10: ac electrical specifications for rimm modules symbol rimm module capacity 256/288mb 192/216mb 128/144mb 96/108mb 64/72mb unit number of 128/144mb rdrams 16 12 8 6 4 parameter and condition for rimm modules freq. max max max max max t pd propagation delay, all rsl signals -800 2.11 1.76 1.56 1.40 1.28 ns -711 2.11 1.76 1.56 1.40 1.28 ns -600 2.11 1.76 1.56 1.40 1.28 ns v a /v in attenuation limit -800 25.0 20.0 16.0 14.0 12.0 % -711 25.0 20.0 16.0 14.0 12.0 % -600 18.5 15.5 12.5 11.5 10.5 % v xf /v in forward crosstalk coefficient (300ps input rise time @ 20%-80%) -800 8.0 6.0 4.0 3.0 2.0 % -711 8.0 6.0 4.0 3.0 2.0 % -600 8.0 6.0 4.0 3.0 2.0 % v xb /v in backward crosstalk coefficient (300ps input rise time @ 20%-80%) -800 2.5 2.3 2.0 1.8 1.5 % -711 2.5 2.3 2.0 1.8 1.5 % -600 2.5 2.3 2.0 1.8 1.5 % r dc dc resistance limit -800 1.2 1.1 0.8 0.7 0.6 w -711 1.2 1.1 0.8 0.7 0.6 w -600 1.2 1.1 0.8 0.7 0.6 w
mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 page 10 version 1.1a oct. 2000 figure 3: rimm module pcb physical dimensions physical dimensions -1 ( for pcb ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specification use the default tolerance of 0.127[ 0.005]. 133.35 0.127[5.250 0.005] 45.00[1.772] 1.00[0.039] 5.68[0.2236] 11.50[0.453] 45.00[1.772] 78.175[3.078] 55.175 0.08[2.172 0.003] 3 1 . 7 5 [ 1 . 2 5 ] 7.468[0.294] 4.50[0.177] a-1 a-92 detail a detail b b-1 0.80 0.10 0.15 0.10 2.99 0.05 [0.031 0.004] [0.006 0.004] [0.12 0.002] detail a 3.00 0.10 2.00 0.10 detail b [0.12 0.004] [0.079 0.004] min.4.88 [0.192] r 1.00 1.00 [0.039] 3.00[0.118] 6.35[0.25] r 2.00 component area (a side) dia 2.44 120.65[4.75] component area (b side) 4.00 0.15 [0.157 0.006] 2 9 . 2 1 [ 1 . 1 5 ] 1 7 . 7 8 [ 0 . 7 0 0 ] note : the gray area above represents the contact surface of the heat spreader. + + min.6.35[0.25] + heat spreader b-92 8.60[0.339]
mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 page 11 version 1.1a oct. 2000 warning ! hot surface http://www.samsungsemi.com 133.35 0.127[5.250 0.005] 127 0.25[5.0 0.009] 2 6 . 5 4 [ 1 . 0 4 ] material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 4.70 [0.185] pcb heat spreader material csp 1.27 0.10 [0.050 0.004] thermal conductive gap filling max 7.80 [0.307] pcb heat spreader [ single side module ] [ double side module ] a a section a-a 108.97 0.12[4.290 0.005] dia 2.36 0.05[0.09 0.001] 12.7 0.07[0.5 0.002] 12.7 0.07[0.5 0.002] warning ! hot surface http://www.samsungsemi.com 2.9 1.00 0.07 [0.04 0.002] 2 6 . 5 4 [ 1 . 0 4 ] center-point [0.114] 1 1 . 6 8 [ 0 . 4 5 ] 120.66 0.12[4.748 0.005] 127 0.25[5.0 0.009] 3 1 . 7 5 [ 1 . 2 5 ] physical dimensions -2 ( for heat spreader ) the following defines the rimm module dimensions. all units are in millimeters with inches in brackets[ ], where appropriate. the dimensions without tolerance specification use the default tolerance of 0.127[ 0.005]. figure 4: heat spreader physical dimensions
page 12 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 standard rimm module marking the rimm modules available from samsung are marked like figure 5 below. this marking also assists users to specify and verify if the correct rimm modules are installed in their systems. in the diagram, a label is shown attached to the rimm module ? s heat spreader. information contained on the label is specific to the rimm module and provides rdram information without requiring removal of the rimm module ? s heat spreader. label field description marked text unit a vendor logo rimm vendor samsung logo area samsung - b country country of origin korea - c year & week code manufactured year & week code yyww - d module memory capacity number of 8-bit or 9-bit mbytes of rdram storage in rimm module 256mb, 192mb, 128mb, 96mb, 64/mb - e number of rdrams number of rdram devices contained in the rimm module /16, /12, /8, /6, /4 rdram devices f ecc support indicates whether the rimm module supports 8 (no ecc) or 9 (ecc) bit bytes blank = 8 bit bytes ecc = 9 bit bytes - g notice! hot surface caution notice. - - h caution logo iso standard - - i gerber & spd version pcb gerber file & spd code version used on rimm module gerber : 10 = 1.0 ver. spd : 1 = 1.1ver. - j trac row access time -45, -53 ns k memory speed data transfer speed for rdram rimm module 800, 711, 600 mhz l part no. samsung rimm part no. see table 1 - figure 5: rimm marking example a b c d e f g l j h k i korea 0050 128mb /8 ecc mr18r0828bn1-ck8 800-45 101
page 13 mr18r0824(6/8/c/g)bn1 mr16r0824(6/8/c/g)bn1 version 1.1a oct. 2000 table of contents overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 key timing parameters/part numbers . . . . . . . . . . . . . . . . 1 module pad numbers and signal names . . . . . . . . . . . . . . 2 module connector pad description . . . . . . . . . . . . . . . 3 - 4 rimm module functional diagram . . . . . . . . . . . . . . . . . . 5 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . 6 dc recommended electrical conditions . . . . . . . . . . . . . . 6 rimm module supply current profile . . . . . . . . . . . . . . . . 7 ac electrical specifications . . . . . . . . . . . . . . . . . . . . . 8 - 9 physical dimensions -1 ( for pcb ) . . . . . . . . . . . . . . . . . 10 physical dimensions -2 ( for heat spreader) . . . . . . . . . . 11 standard rimm module marking . . . . . . . . . . . . . . . . . . 12 copyright ? october 2000, samsung electronics. all rights reserved. direct rambus and direct rdram, so-rimm and rimm are trademarks of rambus inc. rambus, rdram, and the rambus logo are registered trademarks of rambus inc. this document contains advanced information that is subject to change by samsung electronics without notice document version 1.1 samsung electronics co. ltd. san #24 nongseo-ri, kiheung-eup yongin-city kyunggi-do, korea telephone: 82-331-209-3868 fax: 82-2-760-7990 http://www.intl.samsungsemi.com

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